| PART |
Description |
Maker |
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH6086BDPK RJH6086BDPK-15 |
600 V - 45 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6034DPD-E0 |
600 V - 1 A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGP10H60DF |
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
|
ST Microelectronics
|
| IXGH60N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBTs 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| IXGR40N60C2 IXGR40N60C2D1 |
56 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN
HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs
|
IXYS Corporation
IXYS, Corp.
|
| FS7VS-12A FS7VS-12A-T11 |
7 A, 600 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| RJH60F5DPQ-A0-15 |
600 V - 40 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
